Impurities Confined in Quantum Structures

Impurities Confined in Quantum Structures

Impurities Confined in Quantum Structures

The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.

Physics Briefs

Physics Briefs

Physics Briefs


Shallow Impurities in Semiconductors

Shallow Impurities in Semiconductors

Shallow Impurities in Semiconductors

The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

INELASTIC LIGHT SCATTERING FROM QUASI TWO DIMENSIONAL SYSTEMS IMPURITIES IN SEMICONDUCTOR QUANTUM WELL STRUCTURES AND ELECTRONS CONFINED AT GALLIUM ARSENIDE SURFACES

INELASTIC LIGHT SCATTERING FROM QUASI TWO DIMENSIONAL SYSTEMS  IMPURITIES IN SEMICONDUCTOR QUANTUM WELL STRUCTURES AND ELECTRONS CONFINED AT GALLIUM ARSENIDE SURFACES

INELASTIC LIGHT SCATTERING FROM QUASI TWO DIMENSIONAL SYSTEMS IMPURITIES IN SEMICONDUCTOR QUANTUM WELL STRUCTURES AND ELECTRONS CONFINED AT GALLIUM ARSENIDE SURFACES

width. These results are consistent with assigning this peak to a 1s donor ground state to 1s resonant impurity state excitation. This represents the first observation of resonant impurity states in semiconductor multiple quantum well heterostructures.

JJAP Letters

JJAP Letters

JJAP Letters


Physica

Physica

Physica